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APTM20AM10STG
Phase leg Series & parallel diodes MOSFET Power Module
NT C2 VBUS Q1
VDSS = 200V RDSon = 10m typ @ Tj = 25C ID = 175A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant
G1 OUT S1 Q2
G2
0/VBU S S2 NT C1
OUT VBUS OUT
0/ VBUS
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM20AM10STG - Rev 3
Max ratings 200 175 131 700 30 12 694 89 50 2500
Unit V A V m W A mJ
July, 2006
APTM20AM10STG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V
Typ
Tj = 25C Tj = 125C 10 3
VGS = 10V, ID = 87.5A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V
Max 200 1000 12 5 150
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 150A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 150A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 150A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 150A, R G = 2.5
Min
Typ 13.7 4.36 0.19 224 86 94 28 56 81 99 926 910 1216 1062
Max
Unit nF
nC
ns
J
J
Diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Test Conditions VR=200V IF = 90A IF = 180A IF = 90A Tj = 125C Tj = 25C IF = 90A VR = 133V di/dt = 600A/s Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tc = 85C
Min 200
Typ
Max 250 750
Unit V A A
90 1.1 1.4 0.9 48 99 450 24
1.15 V
July, 2006 2-6 APTM20AM10STG - Rev 3
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
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APTM20AM10STG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.18 0.45 150 125 100 4.7 160 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3-6
APTM20AM10STG - Rev 3
July, 2006
APTM20AM10STG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.18 0.9 0.16 0.14 0.7 0.12 0.5 0.1 0.08 0.3 0.06 Single Pulse 0.04 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 500
V GS=15&10V 9V
Thermal Impedance (C/W)
10
400 ID, Drain Current (A)
Transfert Characteristics
VDS > ID(on)xR DS(on)MAX 250s pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
400 300 200 100 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS (on) vs Drain Current 1.2 1.15 1.1 1.05 1 0.95 0.9 0 40 80 120 160 200 I D, Drain Current (A) 240
VGS =20V
300
7.5V 7V 6.5V 6V 5.5V
200
T J=25C TJ =125C TJ =-55C
100
0 2
3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 180 I D, DC Drain Current (A) 160 140 120 100 80 60 40 20 0 25
July, 2006 4-6 APTM20AM10STG - Rev 3
Normalized to V GS=10V @ 87.5A
VGS =10V
50 75 100 125 TC, Case Temperature (C)
150
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APTM20AM10STG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss 10000 Coss 1 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
limited by RDSon
ON resistance vs Temperature
VGS=10V ID= 87.5A
1000
100s
100
1ms
10
10ms
Single pulse TJ=150C TC=25C
DC line
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 12 V DS =40V I D=150A 10 TJ=25C V DS =100V 8 6 4 2 0 0 50 100 150 200 250 Gate Charge (nC)
July, 2006
V DS =160V
1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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5-6
APTM20AM10STG - Rev 3
APTM20AM10STG
Delay Times vs Current 90 80 td(on) and td(off) (ns) 70 60 50 40 30 20 10 0 50 100 150 200 250 300 I D, Drain Current (A) Switching Energy vs Current
VDS=133V RG=2.5 TJ=125C L=100H
Rise and Fall times vs Current 160 140
VDS=133V RG=2.5 T J=125C L=100H
td(off) t r and tf (ns)
tf
120 100 80 60 40 20 0 0
tr
td(on)
50
100
150
200
250
300
ID, Drain Current (A)
Switching Energy vs Gate Resistance 3 Switching Energy (mJ) 2.5 2 1.5 1 Eon
VDS=133V ID=150A TJ=125C L=100H
2.5 2 1.5 1 0.5 0 0 50 100 150 200 250 300
ID, Drain Current (A)
VDS=133V RG=2.5 TJ=125C L=100H
Eon Eoff
Eon and Eoff (mJ)
Eoff
Eon
0
5
10
15
20
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
Operating Frequency vs Drain Current 300 Frequency (kHz) 250 200 150 100 50 0 20 40 60 80 100 120 140 160 ID, Drain Current (A)
Hard Switching ZVS V DS=133V D=50% R G=2.5 T J=125C T C=75C
IDR, Reverse Drain Current (A)
350
100
TJ =150C TJ =25C
ZCS
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V)
July, 2006
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6-6
APTM20AM10STG - Rev 3

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